Paper Info
Title
Memristors-based Ternary Content Addressable Memory (mTCAM)
Abstract
A memristors-based Ternary Content Addressable Memory (mTCAM) is presented. A unit mTCAM cell consists of 5T2R, five transistors and two memristors to store the ternary information, having higher storage density than conventional CMOS TCAMs together with the memristors' unique non-volatility. In the write mode, each memristor in the cell is programmed individually such that high impedance is always present between searchlines to reduce the direct current. A two-step write scheme is proposed to reduce the write voltage compliance, and the search voltage used to drive the search content was chosen to optimize the sensing margin. Simulation results for a 2×4 mTCAM array demonstrate the functionality and feasibility of the proposed mTCAM structure, in both write and search modes.
Year
DOI
Venue
2014
10.1109/ISCAS.2014.6865619
ISCAS
Keywords
Field
DocType
memristors based ternary content addressable memory,write voltage compliance,storage density,cmos tcam,sensing margin,write mode,5t2r cell structure,search mode,2×4 mtcam array,memristors,search voltage,content-addressable storage,transistors,switches,computer aided manufacturing
Direct current,Memristor,Ternary content addressable memory,Computer science,Voltage,CMOS,Ternary operation,Electronic engineering,Transistor,High impedance
Conference
ISSN
Citations 
PageRank 
0271-4302
0
0.34
References 
Authors
3
3
Name
Order
Citations
PageRank
Le Zheng1417.48
Sang-Ho Shin242041.46
Sung-Mo Steve Kang31198213.14