Title
Characterization and compensation of performance variability using on-chip monitors
Abstract
Aggressive technology scaling and strong demand for lowering supply voltage impose a serious challenge in achieving robust and energy-efficient circuit operation. This paper first overviews circuit techniques for variability resilience including on-chip circuits for performance and variability monitoring. We then focus on on-chip delay cells for transistor performance estimation and homogeneous and inhomogeneous ring oscillators for Die-to- Die (D2D) and Within-Die (WID) variability extraction. We also explain topology-reconfigurable on-chip monitors for in-situ variability characterization which can be used for D2D and WID variability modeling. The monitor can also be used for monitoring temporal variability such as Random Telegraph Noise (RTN). Compensation of performance variability can be done by a localized body biasing with on-chip monitors. A proof-of-concept circuit fabricated in a 65 nm process will be demonstrated such that a test chip fabricated at the slow process corner can achieve a target performance under the typical process condition by the compensation.
Year
DOI
Venue
2014
10.1109/VLSI-TSA.2014.6839640
VLSI Technology, Systems and Application
Keywords
Field
DocType
variability resilience,variability monitoring,network synthesis,inhomogeneous ring oscillators,topology-reconfigurable on-chip monitors,circuit techniques,wid variability modeling,performance variability compensation,d2d variability extraction,d2d variability modeling,integrated circuit modelling,transistor circuits,random telegraph noise,die-to-die variability extraction,nmosfet,pmosfet,size 65 nm,on-chip circuits,energy-efficient circuit operation,localized body biasing,network topology,test chip,homogeneous ring oscillators,delays,slow process corner,performance variability characterization,temporal variability monitoring,transistor performance estimation,aggressive technology scaling,proof-of-concept circuit,integrated circuit design,in-situ variability characterization,wid variability extraction,compensation,on-chip delay cells,within-die variability extraction,rtn,oscillators,mosfet,system on chip,threshold voltage,tuning
Oscillation,Computer science,Process corners,Homogeneous,Voltage,Real-time computing,Chip,Electronic engineering,Electronic circuit,Transistor,Biasing
Conference
Citations 
PageRank 
References 
3
0.48
12
Authors
2
Name
Order
Citations
PageRank
Islam A. K. M. Muzahidul1487.31
Hidetoshi Onodera2455105.29