Title
A hybrid ESD clamp with thyristor delay element and diodes for low-leakage applications
Abstract
Electrostatic discharge (ESD) and Electrical Overstress (EOS) are well-known problems in integrated circuits that affect the reliability, yield and cost. In addition, it has been reported that ESD/EOS contributes to significantly large fraction of failures [1]. It is important to design ESD protection circuits that are able to prevent these failures. In this work, a 65 nm hybrid ESD power supply clamp, which consists of static and transient clamps, for low leakage applications is presented. A diode configuration is used as a static clamp, while the transient clamp consists of a PMOS as the main transistor with body bias and thyristor as a delay element. Simulation and measurement results show that the clamp has fast response for ESD-like event. Extensive stability analysis demonstrates that the clamp is stable against false triggering, oscillation, power supply noise and latch-up. Carried out measurement results also show that the clamp is capable of handling 1.55A of current while its leakage is only 32.9nA, whereas the traditional clamp has a leakage of 1.47μA.
Year
DOI
Venue
2014
10.1109/NEWCAS.2014.6934085
NEWCAS
Keywords
Field
DocType
circuit stability,clamps,diodes,electrostatic discharge,failure analysis,integrated circuit reliability,power supply circuits,thyristors,eos,esd protection circuit design,pmos,body bias,current 1.47 mua,current 1.55 a,delay element,diode configuration,electrical overstress,extensive stability analysis,false triggering,hybrid esd power supply clamp,integrated circuits,latch-up,low-leakage applications,oscillation,power supply noise,reliability,size 65 nm,static clamp,thyristor delay element,transient clamps,charged device model (cdm),esd power supply clamps,electrostatic discharge (esd),human body model (hbm),transmission line pulse (tlp) testing,leakage,stress,transistors,latch up
Leakage (electronics),Electrostatic discharge,Computer science,Clamp,Diode,Electronic engineering,Thyristor,Electronic circuit,Transistor,Integrated circuit,Electrical engineering
Conference
ISSN
Citations 
PageRank 
2472-467X
0
0.34
References 
Authors
2
3
Name
Order
Citations
PageRank
Elghazali, M.100.68
Manoj Sachdev266988.45
Opal, A.300.34