Name
Title | ||
|---|---|---|
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications |
Abstract | ||
|---|---|---|
Recently there has been increased demand for not only ultra-low power, but also high performance, even in standby-power-critical applications. Sensor nodes, for example, need a microcontroller unit (MCU) that has the ability to process signals and compress data immediately. A previously reported 130nm CMOS and FeRAM-based MCU features zero-standby power and fast wakeup operation by incorporating FeRAM devices into logic circuits [1]. The 8MHz speed, however, was not sufficiently high to meet application requirements, and the FeRAM process also has drawbacks: low compatibility with standard CMOS, and write endurance limitations. A spintronics-based nonvolatile integrated circuit is a promising option to achieve zero standby power and high-speed operation, along with compatibility with CMOS processes. In this work, we demonstrate a fully nonvolatile 16b MCU using 90nm standard CMOS and three-terminal SpinRAM technology. It achieves 20MHz, 145μW/MHz operation with a 1V supply in the active state, and 4.5μW intermittent operation with 120ns wakeup time and 0.1% active ratio, without forwarding of re-boot code from memory. The features provide sufficiently long battery life to achieve maintenance-free sensor nodes. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ISSCC.2014.6757392 | Solid-State Circuits Conference Digest of Technical Papers |
Keywords | DocType | ISSN |
cmos integrated circuits,low-power electronics,magnetoelectronics,microcontrollers,random-access storage,cmos processes,feram devices,feram-based mcu,frequency 20 mhz,logic circuits,microcontroller unit,power 4.5 muw,sensor nodes,size 90 nm,spintronics-based nonvolatile integrated circuit,standby-power-critical applications,three-terminal spinram technology,time 120 ns,voltage 1 v,word length 16 bit,write endurance limitations,zero standby power,low power electronics | Conference | 0193-6530 |
Citations | PageRank | References |
29 | 1.81 | 2 |
Authors | ||
14 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Noboru Sakimura | 1 | 116 | 22.07 |
| Yukihide Tsuji | 2 | 44 | 4.55 |
| Ryusuke Nebashi | 3 | 98 | 14.37 |
| Hiroaki Honjo | 4 | 90 | 11.43 |
| Ayuka Morioka | 5 | 42 | 3.49 |
| kunihiko ishihara | 6 | 29 | 1.81 |
| k kinoshita | 7 | 33 | 3.04 |
| Shunsuke Fukami | 8 | 59 | 7.10 |
| Sadahiko Miura | 9 | 79 | 7.86 |
| Naoki Kasai | 10 | 84 | 12.69 |
| tetsuo endoh | 11 | 30 | 2.23 |
| Hideo Ohno | 12 | 123 | 33.57 |
| Takahiro Hanyu | 13 | 54 | 6.24 |
| Tadahiko Sugibayashi | 14 | 127 | 28.40 |