Title
The use of tolerance intervals in the characterization of semiconductor devices
Abstract
The authors discuss statistical intervals and provide an application of tolerance intervals to parametric characterization of semiconductor devices during the development cycle. Specifically, a methodology for computing two-sided tolerance intervals for a one-way random-effects model from a normal population is presented. The proposed approach is relevant to any industry in which batch processing exists
Year
DOI
Venue
1990
10.1109/TEST.1990.114136
Washington, DC
Keywords
Field
DocType
batch processing (industrial),random processes,semiconductor device manufacture,semiconductor device testing,statistical analysis,batch processing,development cycle,normal population,one-way random-effects model,parametric characterization,semiconductor devices,statistical intervals,two-sided tolerance intervals
Population,Computer science,Stochastic process,Electronic engineering,Parametric statistics,Batch processing,Tolerance interval,Semiconductor device,Statistical analysis
Conference
Citations 
PageRank 
References 
0
0.34
0
Authors
2
Name
Order
Citations
PageRank
Yolanda T. Hadeed100.34
Kevin T. Lewis200.34