Title
A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology
Abstract
This paper presents five-stage and seven-stage distributed amplifiers (DA) in a 0.12 μm SOI CMOS technology. The five-stage DA has a 4 to 91 GHz bandpass frequency with a gain of 5 dB. The seven-stage DA has a 5 to 86 GHz bandpass frequency with a gain of 9 dB. The power consumption is 90 and 130 mW for the 5-stage and 7-stage respectively at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm2 for the 5-stage and 7-stage respectively.
Year
DOI
Keywords
2003
10.1109/CICC.2003.1249382
CMOS analogue integrated circuits,MMIC amplifiers,distributed amplifiers,integrated circuit design,millimetre wave amplifiers,silicon-on-insulator,0.12 micron,130 mW,2.6 V,4 to 91 GHz,5 dB,5 to 86 GHz,9 dB,90 mW,CMOS microprocessor technology,SOI,Si-SiO2,bandpass frequency gain,microwave amplifier,mm-wave distributed amplifier,multi-stage DA
DocType
ISBN
Citations 
Conference
0-7803-7842-3
0
PageRank 
References 
Authors
0.34
0
11
Name
Order
Citations
PageRank
Plouchart, J.-O.1315.54
Jonghae Kim2111.85
Zamdmer, N.310.71
Liang-Hung Lu400.34
Melanie Sherony5163.56
Yue Tan6101.26
robert a groves700.34
Robert Trzcinski8335.15
M. Talbi951.72
Asit Ray10111.84
l f wagner1100.34