Name
Title | ||
|---|---|---|
A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission |
Abstract | ||
|---|---|---|
A test structure and method for two-dimensional analysis of fabrication process and reliability of MOSFET using a photoemission microscope are presented. Arrays of 20×10(=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1109/ICMTS.2004.1309474 | Ieice Transactions |
Keywords | Field | DocType |
mosfet,hot carriers,photoelectron microscopy,semiconductor device breakdown,semiconductor device reliability,semiconductor device testing,2d gate length distributions,characteristics fluctuation,fabrication process,hot-carrier-induced photoemission,intensity fluctuation,nondestructive method,photoemission microscopy,reliability,test structure,two-dimensional analysis,dimensional analysis | Test method,Electronic engineering,Microscope,Process variation,Engineering,MOSFET,Test structure,Fabrication,Manufacturing process | Journal |
Volume | Issue | ISBN |
88-C | 5 | 0-7803-8262-5 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| toshihiro matsuda | 1 | 0 | 0.34 |
| hiroaki takeuchi | 2 | 0 | 0.68 |
| hiroaki takeuchi | 3 | 0 | 0.68 |
| hideyuki iwata | 4 | 0 | 0.34 |
| takashi ohzone | 5 | 0 | 0.34 |
| Kyoji Yamashita | 6 | 1 | 1.74 |
| Norio Koike | 7 | 1 | 0.77 |
| Ken-ichiro Tatsuuma | 8 | 0 | 0.34 |