Title
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
Abstract
This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-μm SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.
Year
DOI
Venue
2004
10.1109/JSSC.2004.831612
Solid-State Circuits, IEEE Journal of
Keywords
DocType
Volume
CMOS integrated circuits,coplanar waveguides,silicon-on-insulator,travelling wave amplifiers,0.12 micron,130 mW,18 GHz,2.6 V,4 to 91 GHz,5 dB,5 to 86 GHz,9 dB,90 mW,CPW transmission line,SOI CMOS microprocessor technology,bandpass frequency,broadband CMOS circuit,high gain bandwidth product,power consumption,traveling-wave amplifier,voltage power supply,Broadband CMOS circuit,CPW transmission line,SOI,high gain bandwidth product,traveling waveguide amplifier
Journal
39
Issue
ISSN
Citations 
9
0018-9200
1
PageRank 
References 
Authors
0.37
0
4
Name
Order
Citations
PageRank
Plouchart, J.-O.1315.54
Jonghae Kim2111.85
Zamdmer, N.310.71
Liang-Hung Lu410.37