Paper Info
Title
Design and manufacturability aspect of SOI CMOS RFICs
Abstract
This paper presents the design and manufacturability of SOI RF integrated circuits, from an SOI technology understanding, to the integration of high-performance passive devices for a wireless system-on-chip (SoC) application. In the technology section, we show the ability of SOI NMOS transistors to function as high-bandwidth amplifiers. A 9-stage distributed amplifier exhibited a gain of 11 dB with a 90 GHz 3 dB cut-off frequency. We also present four features of an aggressively scaled 120 nm partially-depleted SOI CMOS technology that shows its suitability for HF circuit applications. In the integrated-passive section, high-Q inductors and high value capacitors are both presented. In the RF circuit design section, four 5 GHz LC-tank VCOs are detailed Finally, a 2:1 static frequency divider, exhibiting a maximum operating frequency of 33 GHz, is described.
Year
DOI
Venue
2004
10.1109/CICC.2004.1358880
CICC
Keywords
Field
DocType
cmos integrated circuits,mmic oscillators,capacitors,distributed amplifiers,frequency dividers,inductors,millimetre wave amplifiers,radiofrequency integrated circuits,silicon-on-insulator,system-on-chip,voltage-controlled oscillators,wideband amplifiers,11 db,120 nm,33 ghz,5 ghz,90 ghz,cmos,lc-tank vco,nmos transistors,rf integrated circuits,rfic,soi technology,soc,distributed amplifier,high-q inductors,high-bandwidth amplifiers,integrated passive devices,manufacturability,partially-depleted soi,static frequency divider,wireless system-on-chip,silicon on insulator,circuit design,integrated circuit,chip,system on chip
Distributed amplifier,Frequency divider,NMOS logic,Computer science,Circuit design,CMOS,Electronic engineering,Electrical engineering,Design for manufacturability,Integrated circuit,Amplifier
Conference
ISBN
Citations 
PageRank 
0-7803-8495-4
0
0.34
References 
Authors
4
3
Name
Order
Citations
PageRank
Jonghae Kim110114.95
Plouchart, J.-O.2315.54
N. Zamdmer3679.69