Name
Abstract | ||
|---|---|---|
The neu-MOS (νMOS) transistor is a new device that enables the design of conventional digital and analog circuits, in standard CMOS, with a factor of 5-10 decrease in gate count. Furthermore, νMOS circuit characteristics are insensitive to transistor parameter variations but instead rely on coupling capacitor ratios. In this paper, we demonstrate this principle with results from fabricated controlled gain amplifiers. This new technology is ideal for smart sensors where a high functionality per pixel area and good matching between pixels is required. Moreover, we discuss the advantages of smart sensors in GaAs technology and the viability of developing a νGaAs paradigm |
Year | DOI | Venue |
|---|---|---|
1998 | 10.1109/ICECS.1998.814017 | Electronics, Circuits and Systems, 1998 IEEE International Conference |
Keywords | DocType | Volume |
cmos integrated circuits,intelligent sensors,mixed analogue-digital integrated circuits,neural chips,νmos,gaas,controlled gain amplifiers,coupling capacitor ratios,functionality,gate count,pixel area,smart sensors,standard cmos,transistor parameter variations,cmos technology,analog circuits,silicon,capacitors | Conference | 3 |
ISBN | Citations | PageRank |
0-7803-5008-1 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| d abbott | 1 | 0 | 0.34 |
| said f alsarawi | 2 | 6 | 1.53 |
| barbara alvarez gonzalez | 3 | 0 | 0.34 |
| j f lopez | 4 | 1 | 0.77 |
| j austincrowe | 5 | 0 | 0.34 |
| Kamran Eshraghian | 6 | 101 | 27.54 |