Name
Title | ||
|---|---|---|
High frequency behaviour of electron transport in silicon and its implication for drain conductance of MOS transistors |
Abstract | ||
|---|---|---|
Drain conductance gd is an important small signal parameter of the MOS transistor: Very small values of drain conductance are crucial to realizing high-gain amplifiers. This paper studies high-frequency small signal behaviour of electron transport in silicon under biasing electric fields that are typical of MOS channels in the saturation region using Monte Carlo technique. It is found that the small signal mobility, which is very small at low frequencies, becomes large at high frequencies of the order of 1012-1013 Hz. This behaviour indicates that in those MOS devices where velocity saturation is the cause of drain current saturation the drain conductance at high frequencies will become large. This will substantially reduce amplifier gains at these frequencies |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1109/ICVD.2001.902706 | VLSI Design |
Keywords | Field | DocType |
MOSFET,Monte Carlo methods,carrier mobility,digital simulation,elemental semiconductors,semiconductor device models,silicon,1E12 to 1E13 Hz,MOS channels,MOS transistors,Monte Carlo technique,Si,biasing electric fields,drain conductance,drain current saturation,electron transport,high-gain amplifiers,saturation region,small signal mobility,small signal parameter,velocity saturation | Saturation (chemistry),Computer science,Velocity saturation,Electronic engineering,Transistor,MOSFET,Conductance,Electron mobility,Biasing,Amplifier | Conference |
ISSN | ISBN | Citations |
1063-9667 | 0-7695-0831-6 | 0 |
PageRank | References | Authors |
0.34 | 1 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Prasad, B. | 1 | 0 | 0.34 |
| George, P.J. | 2 | 0 | 0.34 |
| Chandra Shekhar | 3 | 19 | 9.71 |