Name
Title | ||
|---|---|---|
Optimization of Surface Orientation for High-Performance, Low-Power and Robust FinFET SRAM |
Abstract | ||
|---|---|---|
We analyze the impact of surface orientation on stability, performance and power of 6-T and 8-T FinFET SRAMs. We show that, in comparison to 32nm 6-T FinFET SRAM cell with devices of (110) orientation, multi-oriented devices with optimized orientation can improve the static noise margin (SNM) by 23-35% and access time (~22-33%), while consuming the same leakage power. For 8-T FinFET SRAM, multi-oriented devices can improve write stability substantially (~17%) with negligible area overhead |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1109/CICC.2006.321009 | San Jose, CA |
Keywords | Field | DocType |
MOSFET,SRAM chips,32 nm,FinFET SRAM cell,multioriented devices,static noise margin,surface orientation | Static noise margin,Access time,Computer science,Leakage power,Static random-access memory,Electronic engineering,Sram cell,MOSFET | Conference |
ISBN | Citations | PageRank |
1-4244-0076-7 | 4 | 1.34 |
References | Authors | |
0 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Saakshi Gangwal | 1 | 4 | 1.34 |
| Saibal Mukhopadhyay | 2 | 1288 | 150.52 |
| Kaushik Roy | 3 | 7093 | 822.19 |