Abstract | ||
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A new scheme to reduce the power consumption of static random access memories is presented. It is shown that using segmented virtual grounding (SVGND), it is possible to reduce both dynamic and static power consumption. The leakage power of the cells is reduced by reducing the voltage drop over a cell. The dynamic power dissipation is also reduced by eliminating the power consumption due to the discharge of the nondesired neighboring bitlines. The effectiveness of this scheme is compared to recently reported low-power schemes. It is shown that unlike those schemes, SVGND can accommodate multiple words in one row; a significant improvement in soft error rate tolerance. |
Year | DOI | Venue |
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2007 | 10.1109/TVLSI.2007.893584 | VLSI) Systems, IEEE Transactions |
Keywords | Field | DocType |
SRAM chips,earthing,embedded systems,leakage currents,low-power electronics,power consumption,cells leakage power,dynamic power consumption,dynamic power dissipation,leakage current,low-power embedded SRAM,segmented virtual ground architecture,segmented virtual grounding,soft error rate tolerance,static power consumption,static random access memories,voltage drop,Leakage current,low-leakage,low-power,memories,power consumption,random access memories (RAM),static access random memories (SRAM) | Virtual ground,Soft error,Computer science,Overvoltage,Voltage drop,Electronic engineering,Static random-access memory,Ground,Electrical engineering,Low-power electronics,Random access | Journal |
Volume | Issue | ISSN |
15 | 2 | 1063-8210 |
Citations | PageRank | References |
15 | 1.49 | 5 |
Authors | ||
2 |
Name | Order | Citations | PageRank |
---|---|---|---|
Mohammad Sharifkhani | 1 | 147 | 25.76 |
Manoj Sachdev | 2 | 669 | 88.45 |