Name
Title | ||
|---|---|---|
Inverter transfer curves and SRAM noise margin evaluation based on an ultra-compact MOS model |
Abstract | ||
|---|---|---|
In this paper, an ultra-compact I-V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1109/ECCTD.2011.6043401 | Circuit Theory and Design |
Keywords | Field | DocType |
MOS digital integrated circuits,MOSFET,SRAM chips,invertors,nanoelectromechanical devices,DC transfer curve estimation,SRAM noise margin evaluation,digital circuit analysis,inverter transfer curve evaluation,ultracompact I-V nanometer MOS model | Inverter,Digital electronics,Semiconductor device modeling,Computer science,Static random-access memory,Electronic engineering,Mosfet circuits,MOSFET,Noise margin,Electrical engineering | Conference |
ISBN | Citations | PageRank |
978-1-4577-0616-5 | 0 | 0.34 |
References | Authors | |
1 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Elio Consoli | 1 | 117 | 11.62 |
| Gianluca Giustolisi | 2 | 50 | 14.17 |
| Gaetano Palumbo | 3 | 708 | 106.77 |