Title
A 128-bit chip identification generating scheme exploiting SRAM bitcells with failure rate of 4.45 × 10−19
Abstract
We propose a chip identification (ID) generating scheme with random variation of transistor characteristics in SRAM bitcells. In the proposed scheme, a unique fingerprint is generated by grounding both bitlines in write operation. The generated fingerprint mainly reflects threshold voltages of load transistors in the bitcells. We fabricated test chips in a 65-nm process and obtained 384 sets of unique 128-bit fingerprints from 12 chips, which were evaluated in this paper. The fail rate of the ID was found to be 4.45 × 10-19 at a nominal supply voltage of 1.2 V and at room temperature. This scheme can be implemented for existing SRAMs through minor modifications. It has high speed, and is implemented in a very small area overhead.
Year
DOI
Venue
2011
10.1109/ESSCIRC.2011.6044938
ESSCIRC
Keywords
Field
DocType
SRAM chips,fingerprint identification,128-bit chip identification generating scheme,SRAM bitcells,transistor characteristics,unique fingerprint,voltage 1.2 V
Computer science,Failure rate,Static random-access memory,Chip,128-bit,Embedded system
Conference
Volume
Issue
ISSN
112
15
1930-8833 E-ISBN : 978-1-4577-0702-5
ISBN
Citations 
PageRank 
978-1-4577-0702-5
5
0.50
References 
Authors
7
4
Name
Order
Citations
PageRank
Shunsuke Okumura16312.54
Shusuke Yoshimoto23012.56
Hiroshi Kawaguchi339591.51
Masahiko Yoshimoto462.22