Name
Abstract | ||
|---|---|---|
This work presents a temperature and process insensitive CMOS transistor only reference current generator. In the proposed scheme, the passive resistor used in the CMOS Widlar current source is replaced with a transistor resistor where the gate voltage is controlled so that the output current is insensitive to temperature variation. Furthermore, to maintain the temperature insensitivity under process variations, the transistor resistor gate bias circuits optimized for nominal, strong and weak process corners are built on-chip. The proposed reference current generator is designed using 0.5 μm CMOS SOI technology, where the operation is verified through circuit level simulations under nine different process corners. The 20 μA reference current shows a temperature coefficient of 39 ppm/°C within the temperature range of 25°C ~ 125°C for the nominal process corner. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/MWSCAS.2013.6674645 | Circuits and Systems |
Keywords | Field | DocType |
cmos integrated circuits,constant current sources,reference circuits,silicon-on-insulator,cmos soi technology,cmos reference current generator,current 20 mua,current source,gate voltage,passive resistor replacement,process insensitive reference current generator,size 0.5 mum,temperature 25 c to 125 c,temperature insensitive reference current generator,transistor resistor,silicon on insulator | Silicon on insulator,Process corners,Widlar current source,Computer science,Temperature coefficient,Electronic engineering,CMOS,Resistor,Electronic circuit,Transistor,Electrical engineering | Conference |
ISSN | Citations | PageRank |
1548-3746 | 1 | 0.40 |
References | Authors | |
3 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| shiva sai bethi | 1 | 1 | 0.40 |
| Kye-Shin Lee | 2 | 32 | 14.82 |
| R. J. Veillette | 3 | 46 | 8.40 |
| Joan Carletta | 4 | 73 | 11.85 |
| mike willett | 5 | 1 | 0.40 |