Name
Title | ||
|---|---|---|
Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs |
Abstract | ||
|---|---|---|
A comprehensive study of hole mobility behavior with downscaling of silicon body thickness in single-gate ultrathin-body silicon-on-insulator MOSFETs on (100) surface is performed. We present a physics-based model that includes optical and acoustic phonon scattering, surface roughness scattering (including scattering induced by silicon thickness fluctuations) and Coulomb scattering. Although the model is based on effective mass approximation, comparison of simulation results and experimental data shows an excellent agreement, from 30 nm down to 3.8 nm-thick SOI pMOSFETs. |
Year | Venue | Keywords |
|---|---|---|
2011 | Opatija | MOSFET,effective mass,elemental semiconductors,hole mobility,phonons,silicon,silicon-on-insulator,surface roughness,Coulomb scattering,Si,acoustic phonon scattering,effective mass approximation,hole mobility behavior,optical phonon scattering,physics-based modeling,single-gate ultrathin-body silicon-on-insulator MOSFET,size 30 nm to 3.8 nm,surface roughness scattering |
Field | DocType | ISBN |
Silicon on insulator,Computer network,Effective mass (solid-state physics),Phonon,Scattering,MOSFET,Electron mobility,Condensed matter physics,Silicon,Surface roughness,Physics | Conference | 978-1-4577-0996-8 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mirko Poljak | 1 | 0 | 1.69 |
| Vladimir Jovanovic | 2 | 0 | 0.34 |
| Tomislav Suligoj | 3 | 1 | 9.41 |