| Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer | 0 | 0.34 | 2021 |
| Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions | 0 | 0.34 | 2021 |
| Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application | 0 | 0.34 | 2021 |
| Doherty Power Amplifier in Horizontal Current Bipolar Transistor (HCBT) Technology | 0 | 0.34 | 2020 |
| Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode | 0 | 0.34 | 2020 |
| On the modelling of interface roughness scattering in AlGaN/GaN heterostructures | 0 | 0.34 | 2020 |
| Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology | 0 | 0.34 | 2019 |
| Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers | 0 | 0.34 | 2019 |
| Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C | 0 | 0.34 | 2019 |
| Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements | 0 | 0.34 | 2018 |
| Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μM High-Voltage CMOS Technology | 0 | 0.34 | 2018 |
| Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures | 0 | 0.34 | 2018 |
| Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35bm CMOS technology | 0 | 0.34 | 2018 |
| Analysis of tunable BV<inf>CEO</inf> in horizontal current bipolar transistor with floating field plates | 0 | 0.34 | 2018 |
| Impact of the emitter polysilicon thickness on the performance of high-linearity mixers with horizontal current bipolar transistors | 0 | 0.34 | 2016 |
| Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes | 1 | 0.63 | 2016 |
| Analysis of electrical and optical characteristics of InP/InGaAs avalanche photodiodes in linear regime by a new simulation environment | 0 | 0.34 | 2016 |
| Fully-integrated voltage controlled oscillator in low-cost HCBT technology | 0 | 0.34 | 2016 |
| Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices | 0 | 0.34 | 2015 |
| Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure | 0 | 0.34 | 2015 |
| Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region | 0 | 0.34 | 2015 |
| Impact of bipolar transistor parameters on the characteristics of the double-balanced mixer. | 0 | 0.34 | 2012 |
| Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions. | 0 | 0.34 | 2012 |
| Effects of disorder on transport properties of extremely scaled graphene nanoribbons. | 0 | 0.34 | 2012 |
| Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology | 0 | 0.34 | 2011 |
| Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs | 0 | 0.34 | 2011 |
| Optimization of the perimeter doping of ultrashallow p+-n−-n+ photodiodes | 0 | 0.34 | 2011 |
