Name
Title | ||
|---|---|---|
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes |
Abstract | ||
|---|---|---|
The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ESSDERC.2014.6948801 | Solid State Device Research Conference |
Keywords | Field | DocType |
CMOS integrated circuits,MOSFET,hot carriers,semiconductor device reliability,silicon-on-insulator,HC reliability,NMOS transistors,advanced CMOS technology nodes,biaxially tensile-strain SOI substrates,drive current,hot carrier reliability,interface quality,sSOI-based devices,standard unstrained SOI substrates,strained FDSOI nMOSFETs,FDSOI,Hot Carrier,nMOSFET,reliability,sSOI,strained silicon | Silicon on insulator,Strained silicon,NMOS logic,Chemistry,CMOS,Electronic engineering,Hot carrier reliability,Transistor | Conference |
Volume | ISSN | ISBN |
113 | 1930-8876 | 978-1-4799-4378-4 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
11 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Besnard, G. | 1 | 0 | 0.34 |
| X. Garros | 2 | 7 | 3.00 |
| Andrieu, F. | 3 | 0 | 1.01 |
| Nguyen, P. | 4 | 0 | 0.34 |
| W. Van Den Daele | 5 | 0 | 0.34 |
| P. Reynaud | 6 | 0 | 0.34 |
| W. Schwarzenbach | 7 | 0 | 0.34 |
| D. Delprat | 8 | 0 | 0.34 |
| K. K. Bourdelle | 9 | 0 | 0.34 |
| G. Reimbold | 10 | 0 | 0.34 |
| S. Cristoloveanu | 11 | 0 | 0.34 |