Name
Abstract | ||
|---|---|---|
Multi-level programming in Phase-Change Memories (PCMs) requires adequate understanding of the phenomena affecting the stability of the programmed levels. Although crystallization in GST (Ge2Sb2Te5) has been extensively studied, further analysis is needed to understand the phase distribution in intermediate states between the amorphous and the crystalline GST. In this paper, we carry out a drift-driven analysis on a PCM array to investigate phase distribution of intermediate resistance states obtained with partial-SET programming. The analysis shows that the phase distribution after a partial-SET pulse can be more conveniently described by means of a parallel-like model having a crystalline path inside an amorphous cap. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ICECS.2014.7049981 | Electronics, Circuits and Systems |
Keywords | Field | DocType |
phase change memories,semiconductor storage,Ge2Sb2Te5,PCM array,crystalline GST,drift-driven investigation,intermediate resistance,multilevel programming,partial-SET programming,phase distribution,phase-change memories | Phase change,Computer science,Crystal,Crystallization,Electronic engineering,Amorphous solid | Conference |
Citations | PageRank | References |
1 | 0.42 | 1 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Alessandro Cabrini | 1 | 108 | 24.11 |
| Braga, S. | 2 | 1 | 0.42 |
| Guido Torelli | 3 | 240 | 64.39 |