Name
Title | ||
|---|---|---|
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing |
Abstract | ||
|---|---|---|
We have investigated the role of threading dislocations in pit formation during stressing of AlGaN/GaN on Si high electron mobility transistors under high reverse bias. Upon stressing, the drain current saturation (ID-saturation) decreases over time. The amount of ID-saturation degradation correlates well with pit formation at the gate-edge, where the electric field is the highest. Using a transmission electron microscope weak-beam technique, it is found that pits tend to nucleate at threading dislocations that have a screw component, even when these dislocations are at locations away from the gate-edge. An explanation based on an electrochemical oxidation model is proposed. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112768 | Reliability Physics Symposium |
Keywords | Field | DocType |
iii-v semiconductors,aluminium compounds,electric fields,gallium compounds,high electron mobility transistors,silicon,transmission electron microscopy,wide band gap semiconductors,algan-gan,si,drain current saturation,electric field,electrochemical oxidation model,gate-edge,high electron mobility transistor,physical degradation,pit formation,reverse bias stressing,threading dislocation,transmission electron microscope weak-beam technique,algan/gan,hemt,reliability,threading dislocations,degradation,logic gates | Gallium nitride,Electric field,Nucleation,Transmission electron microscopy,Electronic engineering,Engineering,Dislocation,Transistor,Electron mobility,Silicon | Conference |
ISSN | Citations | PageRank |
1541-7026 | 2 | 0.80 |
References | Authors | |
0 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sasangka, W.A. | 1 | 3 | 2.25 |
| Syaranamual, G.J. | 2 | 3 | 2.25 |
| Chee Lip Gan | 3 | 42 | 10.12 |
| Thompson, Carl V. | 4 | 50 | 11.56 |