Title
Impact of package on neutron induced single event upset in 20 nm SRAM
Abstract
This work investigates the impact of package structure on single event upset (SEU) rate through neutron irradiation test and Monte Carlo simulation of the particles passage. Irradiation test results show that the resin existing in the upper stream of the beam could increase SEU rate by about 10 %. The simulation result demonstrates that light secondary particles generated in the package materials, such as proton and alpha particles, contribute to the SEU rate elevation. Therefore, SEU rate evaluation should pay attention to the package structure especially for low voltage devices having low critical charge of 0.4 fC and below.
Year
DOI
Venue
2015
10.1109/IRPS.2015.7112828
Reliability Physics Symposium
Keywords
Field
DocType
monte carlo methods,sram chips,integrated circuit packaging,integrated circuit testing,radiation hardening (electronics),monte carlo simulation,seu rate elevation,sram,alpha particle,light secondary particle passage generation,neutron induced single event upset,neutron irradiation testing,package material structure,proton,size 20 nm,neutron irradiation test,package,resin,single event upset (seu),neutrons,protons,alpha particles
Neutron,Proton,Monte Carlo method,Irradiation,Electronic engineering,Static random-access memory,Low voltage,Alpha particle,Single event upset,Physics
Conference
ISSN
Citations 
PageRank 
1541-7026
0
0.34
References 
Authors
0
4
Name
Order
Citations
PageRank
Taiki Uemura100.34
Takashi Kato200.34
Hideya Matsuyama300.34
Masanori Hashimoto446279.39