Title
A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
Abstract
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10−12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
Year
Venue
Keywords
2015
Optical Fiber Communications Conference and Exhibition
cmos integrated circuits,modulation,optical waveguides,bit error rate
DocType
Citations 
PageRank 
Conference
1
0.48
References 
Authors
1
14