Name
Title | ||
|---|---|---|
High-Frequency Temperature-Dependent Through-Silicon Via (TSV) Model and High-Speed Channel Performance for 3D IC |
Abstract | ||
|---|---|---|
In this paper, we propose high-frequency temperature-dependent models for through-silicon via (TSV) noise coupling and channel transmission in 3D integrated circuit. We analyze the effect of temperature variations from 25°C to 100°C on TSV noise coupling and the channel transmission characteristics in S21 up to 20 GHz. To verify the proposed model, we present the measurement results of both noise coupling and S21 of the test vehicles, and we compare the experimental results with the model at different temperatures. We also present the measured eye diagrams at 1, 4, and 10 Gb/s and analyze the results using the proposed model. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/MDAT.2015.2455336 | Design & Test, IEEE |
Keywords | Field | DocType |
3D IC,TSV channel,Through-silicon via (TSV),noise coupling,substrate noise,temperature-dependent TSV model | Capacitance,Coupling,Computer science,Signal integrity,Communication channel,Electronic engineering,Silicon interposer,Through-silicon via,Solid modeling,Temperature measurement | Journal |
Volume | Issue | ISSN |
PP | 99 | 2168-2356 |
Citations | PageRank | References |
1 | 0.37 | 1 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Lee, M. | 1 | 34 | 2.51 |
| Dong-Hoon Jung | 2 | 52 | 9.16 |
| Heegon Kim | 3 | 15 | 7.69 |
| Jonghyun Cho | 4 | 60 | 8.44 |