Name
Abstract | ||
|---|---|---|
Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/VLSIT.2015.7223642 | VLSI Technology |
Keywords | Field | DocType |
flash memories,flexible electronics,integrated circuit reliability,logic gates,TLC NAND,cold flash memories,digital archive,flex-nLC,flexible nLC scheme,millennium memories,time 1000 year,time 20 year,triple level cell | Computer science,Measurement uncertainty,Triple level cell,NAND gate,Electronic engineering,Temperature measurement,Bit error rate,Encoding (memory) | Conference |
ISSN | Citations | PageRank |
0743-1562 | 1 | 0.36 |
References | Authors | |
0 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yamazaki, S. | 1 | 1 | 0.36 |
| Shuhei Tanakamaru | 2 | 121 | 18.35 |
| Suzuki, S. | 3 | 34 | 9.44 |
| Iwasaki, T.O. | 4 | 1 | 0.36 |