Title
Soft error masking latch for sub-threshold voltage operation
Abstract
Due to continuous technology scaling, the nodal capacitances reduction and power supply voltage lowering result in an ever decreasing minimal charge capable of upsetting the logic state of memory circuits. CMOS circuits operating under sub-threshold voltage region are more susceptible than ever to externally induced radiation that is likely to bring about the occurrence of soft errors. Therefore, the robustness of the circuits against the soft errors is a requirement in nanoscale circuit designs. Since the previous soft error masking designs result in significant cost penalties in terms of power, area and performance when they applied to under V-th operation, the development of low-cost hardened designs for storage cells is important. In this paper, a novel radiation hardened latch is presented for high performance sub-threshold voltage operation. The critical charge is increased five times than that of the conventional latch with only 10% of area increment including 46% of power reduction. This result caused by shortening delay and reduced power loss arose from it.
Year
DOI
Venue
2012
10.1109/MWSCAS.2012.6291948
Midwest Symposium on Circuits and Systems Conference Proceedings
Keywords
Field
DocType
integrated circuit design,logic gates,low power electronics,nanoelectronics,radiation hardening
Logic gate,Pass transistor logic,Soft error,Computer science,Voltage,CMOS,Electronic engineering,Electronic circuit,Electrical engineering,Threshold voltage,Low-power electronics
Conference
ISSN
Citations 
PageRank 
1548-3746
1
0.37
References 
Authors
7
3
Name
Order
Citations
PageRank
Yongsuk Choi1166.01
Yong-bin Kim233855.72
Fabrizio Lombardi31985259.25