Name
Abstract | ||
|---|---|---|
Schottky-barrier diodes fabricated in CMOS without process modification are shown to be suitable for THz imaging. Two THz imagers using a 130-nm digital CMOS technology are demonstrated. A fully-integrated 280-GHz 4x4 imager array exhibits a measured NEP of 29 pW/Hz(1/2) and a responsivity of 5.1kV/W (323 V/W without the amplifier). For the first time, electronic-scanning multi-pixel imaging is demonstrated in a setup that does not require bulky and costly optical lenses and mirrors. A second detector operating at 860 GHz is also demonstrated. The detector without an amplifier achieves responsivity of 355 V/W and NEP of 32 pW/Hz(1/2). It is shown that the comparable responsivity and NEP as that of 280-GHz detector is due to the improvement of patch antenna efficiency at 860 GHz. The NEP at 860 GHz is 2X better than the best reported performance of MOSFET-based imagers without silicon lens attached to the chip. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/ISOCC.2012.6407088 | 2012 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) |
Keywords | Field | DocType |
CMOS, THz, imager, Schottky barrier diode | Responsivity,Computer science,Diode,Electronic engineering,CMOS,Lens (optics),Schottky diode,Terahertz radiation,Detector,Amplifier | Conference |
ISSN | Citations | PageRank |
2163-9612 | 1 | 0.48 |
References | Authors | |
5 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ruonan Han | 1 | 152 | 27.20 |
| Yaming Zhang | 2 | 49 | 9.92 |
| Young-Wan Kim | 3 | 34 | 5.86 |
| Dae Yeon Kim | 4 | 32 | 5.11 |
| Hisashi Shichijo | 5 | 28 | 3.96 |
| K. O. Kenneth | 6 | 3 | 1.24 |