Name
Abstract | ||
|---|---|---|
•Synchrotron X-ray microbeam was used to identify TID sensitivity of FRAM circuits.•Comparative TID sensitivity and failure mode of many different functional blocks were comprehensively analyzed.•Co-60 γ ray irradiation was performed for comparative study of the spot irradiation and wide field irradiation. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.microrel.2015.03.001 | Microelectronics Reliability |
Keywords | Field | DocType |
Ferroelectric random access memory,Microbeam,Total ionizing dose,X-ray,Co-60 | Sense amplifier,Ferroelectricity,Absorbed dose,X-ray,Irradiation,Electronic engineering,Memory array,Engineering,Microbeam,Random access | Journal |
Volume | Issue | ISSN |
55 | 6 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
5 | ||