Name
Abstract | ||
|---|---|---|
The long-term reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Previous studies have shown that the source metallization (top metal and wires) is a failure-prone location of the component. To study how the top aluminum metallization microstructure ages, we have performed ion and electron microscopy and mapped the grain structure before and after avalanche and short-circuit aging tests. The situation under the bond wires is significantly different as the bonding process induces plastic deformation prior to aging. Ion microscopy seems to show two inverse tendencies: grain growth under the wires and grain refinement elsewhere in the metallization. Transmission electron microscopy shows that the situation is more complex. Rearrangement of the initial defect and grain structure happen below and away from the wire. The most harmful fatigue cracks propagate parallel to the wire/metal bonding interface. (C) 2015 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.microrel.2015.06.036 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
Power device,Failure analysis,Metallization microstructure aging,Scanning electron microscopy (SEM),Focused ion beam (FIB),Transmission electron microscopy (TEM),Crystal orientation mapping | Grain growth,Microstructure,Composite material,Aluminium,Power MOSFET,Transmission electron microscopy,Electronic engineering,Engineering,Deformation (engineering),Ion,Forensic engineering,Metallic bonding | Journal |
Volume | Issue | ISSN |
55 | 9-10 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 10 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| R. Ruffilli | 1 | 0 | 0.68 |
| Mounira Berkani | 2 | 47 | 7.23 |
| Ph. Dupuy | 3 | 36 | 7.48 |
| Stéphane Lefebvre | 4 | 0 | 1.01 |
| Yann Weber | 5 | 1 | 2.51 |
| Marc Legros | 6 | 0 | 0.68 |