Name
Title | ||
|---|---|---|
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs |
Abstract | ||
|---|---|---|
The effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I–V measurements, drain-current transient spectroscopy, XRD, and RF stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and lower DIBL) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher dynamic current dispersion, ascribed to higher concentration of the deep levels E2 (0.56eV/10−15cm2) and E4 (0.84eV/10−14cm2). |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.microrel.2015.06.038 | Microelectronics Reliability |
Keywords | Field | DocType |
GaN,HEMT,RF,Buffer,Iron,Carbon,Short-channel,Trapping,Reliability | Dispersion (optics),Electrical performance,Leakage (electronics),Electronic engineering,Subthreshold conduction,Engineering,High-electron-mobility transistor,Spectroscopy | Journal |
Volume | Issue | ISSN |
55 | 9 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
17 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Bisi, D. | 1 | 4 | 2.14 |
| Antonio Stocco | 2 | 0 | 1.35 |
| Isabella Rossetto | 3 | 3 | 4.22 |
| Matteo Meneghini | 4 | 45 | 30.20 |
| Fabiana Rampazzo | 5 | 1 | 3.30 |
| Alessandro Chini | 6 | 43 | 13.88 |
| Fabio Soci | 7 | 0 | 0.68 |
| A. Pantellini | 8 | 6 | 2.67 |
| Claudio Lanzieri | 9 | 10 | 4.44 |
| Piero Gamarra | 10 | 0 | 0.68 |
| C. Lacam | 11 | 0 | 0.34 |
| M. Tordjman | 12 | 0 | 0.34 |
| Marie-Antoinette di Forte-Poisson | 13 | 2 | 1.03 |
| D. De Salvador | 14 | 0 | 0.34 |
| M. Bazzan | 15 | 0 | 0.68 |
| Gaudenzio Meneghesso | 16 | 67 | 38.27 |
| Enrico Zanoni | 17 | 60 | 37.05 |