Name
Title | ||
|---|---|---|
Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications |
Abstract | ||
|---|---|---|
Superjunction (SJ) MOSFETs with low on-resistance and high sustain voltage are widely used as main switching power devices. For the p/n-pillars of SJ-power devices, precise doping at low-doping region below 1016cm−3 concentrations is required, and thus high-sensitivity 2D-carrier profiling of the pillars is indispensable where conventional SCM is insufficient. Previously, we developed the high-vacuum SSRM enabling high-spatial resolution and site-specific 2D-carrier profiling. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.microrel.2015.06.142 | Microelectronics Reliability |
Field | DocType | Volume |
Spreading resistance profiling,Schottky barrier,Profiling (computer programming),Doping,Voltage,Switching power,Electronic engineering,Microscopy,Engineering | Journal | 55 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 10 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Li Zhang | 1 | 120 | 21.80 |
| M. Koike | 2 | 0 | 0.34 |
| Masafumi Ono | 3 | 1 | 0.84 |
| S. Itai | 4 | 0 | 0.34 |
| Kazuya Matsuzawa | 5 | 7 | 3.18 |
| Satoshi Ono | 6 | 0 | 0.68 |
| Wataru Saito | 7 | 3 | 2.55 |
| M. Yamaguchi | 8 | 0 | 0.34 |
| Y. Hayase | 9 | 0 | 0.34 |
| K. Hara | 10 | 0 | 0.34 |