Paper Info
Title
Short-Circuit Protection Circuits For Silicon-Carbide Power Transistors
Abstract
An experimental analysis of the behavior under short-circuit conditions of three different silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a short-circuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 mu s were achieved.
Year
DOI
Venue
2016
10.1109/TIE.2015.2506628
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
Keywords
Field
DocType
Bipolar junction transistor (BJT), driver circuits, failure analysis, fault detection, fault protection, junction field-effect transistor (JFET), power MOSFET, semiconductor device reliability, short-circuit current, silicon carbide (SiC), wide-bandgap semiconductors
Logic gate,Silicon carbide,Power semiconductor device,Power MOSFET,Insulated-gate bipolar transistor,Electronic engineering,Short circuit,Engineering,MOSFET,Electronic circuit,Electrical engineering
Journal
Volume
Issue
ISSN
63
4
0278-0046
Citations 
PageRank 
References 
8
1.30
12
Authors
7
Name
Order
Citations
PageRank
Diane-Perle Sadik181.64
Juan A. Colmenares281.64
Georg Tolstoy381.30
Dimosthenis Peftitsis481.98
Mietek Bakowski581.98
Rabkowski, J.692.39
Hans-Peter Nee711822.12