Name
Title | ||
|---|---|---|
Effects Of Coaxial Through-Silicon Via On Carrier Mobility Along [100] And [110] Crystal Directions Of (100) Silicon |
Abstract | ||
|---|---|---|
This letter investigates the effects of coaxial through-silicon via (TSV) on carrier motilities in the channels of nMOS and pMOS with channels along [100] and [110] orientations on (100) silicon. The keep-out zone (KOZ) induced by coaxial TSV and the effective area occupied by TSV and surrounding KOZ are evaluated. The results show that, the effective area is reduced by similar to 92% by aligning the channels of pMOS along [100] orientation and nMOS along [110] orientation than the opposite orientations. The absolute error ranges from -12.5 mu m to 7.2 mu m as the anisotropic property of silicon are neglected. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1587/elex.12.20150434 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
coaxial through-silicon via (TSV), anisotropic silicon, carrier mobility, finite element analysis (FEA), keep-out-zone (KOZ) | Coaxial,Computer science,Electronic engineering,Through-silicon via,Electron mobility,Silicon | Journal |
Volume | Issue | ISSN |
12 | 14 | 1349-2543 |
Citations | PageRank | References |
3 | 0.57 | 3 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Fengjuan Wang | 1 | 3 | 0.57 |
| Ningmei Yu | 2 | 7 | 4.04 |
| Zhangming Zhu | 3 | 294 | 82.36 |
| Xiangkun Yin | 4 | 3 | 0.91 |
| Yin-Tang Yang | 5 | 334 | 92.74 |