Name
Abstract | ||
|---|---|---|
Resistive random access memory (ReRAM) technology is an emerging candidate for next-generation nonvolatile memory (NVM) architecture due to its simple structure, low programming voltage, fast switc... |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1145/2753759 | ACM Transactions on Design Automation of Electronic Systems |
Keywords | Field | DocType |
Design,Reliability,Cross-point structure,resistive memory,soft error,endurance failure | Switching time,Soft error,Computer science,Voltage,CMOS,Real-time computing,Non-volatile memory,Cross point,Scalability,Resistive random-access memory | Journal |
Volume | Issue | ISSN |
20 | 4 | 1084-4309 |
Citations | PageRank | References |
7 | 0.53 | 15 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Cong Xu | 1 | 1154 | 48.25 |
| Dimin Niu | 2 | 609 | 31.36 |
| Yang Zheng | 3 | 216 | 33.97 |
| Shimeng Yu | 4 | 490 | 56.22 |
| Yuan Xie | 5 | 6430 | 407.00 |