Name
Title | ||
|---|---|---|
A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory. |
Abstract | ||
|---|---|---|
Conventional content addressable memory (BCAM and TCAM) uses specialized 10T/16T bit cells that are significantly larger than 6T SRAM cells. A new BCAM/TCAM is proposed that can operate with standard push-rule 6T SRAM cells, reducing array area by 2-5× and allowing reconfiguration of the SRAM as a CAM. In this way, chip area and overall capacitance can be reduced, leading to higher energy efficien... |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/JSSC.2016.2515510 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Computer aided manufacturing,Arrays,Transistors,Standards,Associative memory,SRAM cells | Sense amplifier,Memory scrubbing,Semiconductor memory,Computer science,Non-volatile random-access memory,Electronic engineering,Universal memory,Static random-access memory,Computer hardware,Memory refresh,Bit cell | Journal |
Volume | Issue | ISSN |
51 | 4 | 0018-9200 |
Citations | PageRank | References |
14 | 0.92 | 13 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Supreet Jeloka | 1 | 41 | 6.41 |
| Naveen Bharathwaj Akesh | 2 | 14 | 0.92 |
| Dennis Sylvester | 3 | 5295 | 535.53 |
| David Blaauw | 4 | 8916 | 823.47 |