Title
Ultra-low-voltage self-body biasing scheme and its application to basic arithmetic circuits
Abstract
AbstractThe gate level body biasing (GLBB) is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS) circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.
Year
DOI
Venue
2015
10.1155/2015/540482
Periodicals
Field
DocType
Volume
Adder,Computer science,Real-time computing,Robustness (computer science),CMOS,Electronic engineering,Low voltage,Electronic circuit,MOSFET,Electrical engineering,Threshold voltage,Biasing
Journal
2015
Issue
ISSN
Citations 
1
1065-514X
1
PageRank 
References 
Authors
0.40
10
3
Name
Order
Citations
PageRank
Taco, R.192.37
Marco Lanuzza220328.64
Albano, D.392.95