Name
Title | ||
|---|---|---|
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors |
Abstract | ||
|---|---|---|
We examine the interplay between the degradations associated with the bias-temperature instability (BTI) and hot carrier degradation (HCD) in single-layer double-gated graphene field-effect transistors (GFETs). Depending on the polarity of the applied BTI stress, the HCD component acting in conjuction can either accelerate or compensate the degradation. The related phenomena are studied in detail at different temperatures. Our results show that the variations of the charged trap density and carrier mobility induced by both contributions are correlated. Moreover, the electron/hole mobility behaviour agrees with the previously reported attractive/repulsive scattering asymmetry. |
Year | Venue | Field |
|---|---|---|
2015 | Proceedings of the European Solid-State Device Research Conference | Analytical chemistry,Graphene,Instability,Degradation (geology),Electronic engineering,Scattering,Transistor,Asymmetry,Materials science,Electron mobility,Electron |
DocType | ISSN | Citations |
Conference | 1930-8876 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yury Illarionov | 1 | 0 | 0.34 |
| m waltl | 2 | 2 | 3.25 |
| Anderson D. Smith | 3 | 0 | 1.35 |
| Sam Vaziri | 4 | 0 | 1.69 |
| Mikael Östling | 5 | 1 | 3.36 |
| Max C. Lemme | 6 | 18 | 3.57 |
| T. Grasser | 7 | 21 | 10.90 |