Name
Abstract | ||
|---|---|---|
This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron (<10%) is obtained, both at room temperature and at high temperature. |
Year | Venue | Keywords |
|---|---|---|
2015 | Proceedings of the European Solid-State Device Research Conference | AlGaN/GaN,HEMT,Carbon,Dynamic Ron,off-state leakage,intrinsic reliability,TDDB |
Field | DocType | ISSN |
Gallium nitride,Wide-bandgap semiconductor,Leakage (electronics),Dielectric,Power semiconductor device,Electronic engineering,Time-dependent gate oxide breakdown,Metalorganic vapour phase epitaxy,Passivation,Optoelectronics,Materials science | Conference | 1930-8876 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
15 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. Moens | 1 | 11 | 8.32 |
| A. Banerjee | 2 | 1 | 1.30 |
| P. Coppens | 3 | 1 | 0.96 |
| A. Constant | 4 | 0 | 0.34 |
| Piet Vanmeerbeek | 5 | 2 | 1.71 |
| Z. Li | 6 | 0 | 0.34 |
| F. Declercq | 7 | 0 | 0.34 |
| L. De Schepper | 8 | 2 | 4.10 |
| H. De Vleeschouwer | 9 | 0 | 0.68 |
| C. Liu | 10 | 0 | 0.34 |
| B. Padmanabhan | 11 | 0 | 0.34 |
| W. Jeon | 12 | 0 | 0.34 |
| J. Guo | 13 | 0 | 0.34 |
| Salih, A. | 14 | 1 | 0.84 |
| Marnix Tack | 15 | 1 | 1.09 |