Name
Title | Citations | PageRank | Year |
|---|---|---|---|
| Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. | 0 | 0.34 | 2017 |
| Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors | 1 | 0.63 | 2015 |
| Technology and design of GaN power devices | 0 | 0.34 | 2015 |