Paper Info
Title
Influence of triple-well technology on laser fault injection and laser sensor efficiency
Abstract
This study is driven by the need to understand the influence of a Deep-Nwell implant on the sensitivity of integrated circuits to laser-induced fault injections. CMOS technologies can be either dual-well or triple-well. Triple-well technology has several advantages compared to dual-well technology in terms of electrical performances. Single-event responses have been widely studied in dual-well whereas SEE (single event effects) in triple-well is not well understood. This paper presents a comparative analysis of soft error rate and countermeasures sensors with for these two techniques in 40 nm and 90 nm CMOS technology. First, laser fault injection on registers were investigated, showing that triple-well technology is more vulnerable. Similarly, we studied the efficiency of Bulk Built-In Current Sensors (BBICS) in detecting laser induced fault injection attempts for both techniques. This sensor was found less effective in triple-well. Finally, a new BBICS compliant with body-biasing adjustments is proposed in order to improve its detection efficiency.
Year
DOI
Venue
2015
10.1109/DFT.2015.7315141
2015 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS)
Keywords
Field
DocType
Laser,fault injection,triple-well,body biasing,countermeasure
Laser sensor,Soft error,Computer science,CMOS,Laser,Electronic engineering,Transient analysis,Transistor,Electrical engineering,Integrated circuit,Fault injection
Conference
ISSN
Citations 
PageRank 
1550-5774
1
0.37
References 
Authors
11
7
Name
Order
Citations
PageRank
Nicolas Borrel1213.31
Clement Champeix2212.97
Edith Kussener3319.16
W. Rahajandraibe41410.25
Mathieu Lisart5396.01
Alexandre Sarafianos6686.96
Jean-Max Dutertre731329.14