Paper Info
Title
MCSSim: A memory channel storage simulator
Abstract
Recently, NVDIMM (Non-Volatile Dual In-line Memory Module) is being widely supported by leading hardware design companies, such as IBM. Nevertheless, existing efforts largely focus on NVDIMM specification and fabrication issues, and the potential performance gains brought by NVDIMM are not fully investigated. In this paper, we present a NVDIMM-based simulator called MCSSim to help study the memory channel storage techniques. MCSSim is a cycle-accurate simulator that is elaborated with the consideration of differences between the memory channel interface and the NAND flash memory features. MCSSim is also implemented with the DRAMSim2 [31] simulator thus enabling the simulation of a variety of hybrid memory systems by combining of DRAM DIMM and NVDIMM. We have done some experiments with MCSSim, and the experimental results show the effectiveness of the proposed simulator.
Year
DOI
Venue
2016
10.1109/ASPDAC.2016.7428004
2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)
Keywords
Field
DocType
MCSSim,memory channel storage simulator,nonvolatile dual inline memory module,NVDIMM,IBM,memory channel storage techniques,cycle-accurate simulator,memory channel interface,NAND flash memory,DRAMSim2,DRAM DIMM
NVDIMM,Registered memory,Semiconductor memory,Interleaved memory,Simulation,Non-volatile random-access memory,Computer science,Computer memory,Memory controller,Racetrack memory,Embedded system
Conference
ISSN
Citations 
PageRank 
2153-6961
0
0.34
References 
Authors
32
4
Name
Order
Citations
PageRank
Renhai Chen11159.09
Zili Shao21618134.03
Chia-Lin Yang3103376.39
Tao Li4513.00