Paper Info
Title
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package
Abstract
In this paper, we present a fully integrated radio-frequency (RF) power amplifier (PA) using high voltage STI type DeNMOS device in standard 28nm CMOS technology. The device is fully compatible with scaled CMOS process technologies with minor cost penalties. The device prototype was fabricated in 28nm CMOS process and packaged in commercially available ball-grid-array (BGA) package to mimic real application conditions. Complete power amplifier circuit, made on low-loss laminate using this BGA package, is also presented. Packaged RF PA achieves 19dBm of output power at frequency of 1GHz with high linearity.
Year
DOI
Venue
2016
10.1109/VLSID.2016.30
2016 29th International Conference on VLSI Design and 2016 15th International Conference on Embedded Systems (VLSID)
Keywords
Field
DocType
Drain Extended MOS,Shallow Trench Isolation,System-on-chip,RF Power Amplifier,Linearity
Ball grid array,System on a chip,Computer science,Direct-coupled amplifier,Electronic engineering,CMOS,Linear amplifier,RF power amplifier,Electrical engineering,Shallow trench isolation,Amplifier
Conference
ISSN
Citations 
PageRank 
1063-9667
0
0.34
References 
Authors
6
5
Name
Order
Citations
PageRank
Ankur Gupta100.34
Mayank Shrivastava227.22
Maryam Shojaei Baghini38629.67
Harald Gossner43916.88
V. Ramgopal Rao52010.28