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MAYANK SHRIVASTAVA
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Name
Affiliation
Papers
MAYANK SHRIVASTAVA
Indian Institute of Technology, Kharagpur, India
21
Collaborators
Citations
PageRank
60
2
7.22
Referers
Referees
References
4
121
35
Search Limit
100
121
Publications (21 rows)
Collaborators (60 rows)
Referers (4 rows)
Referees (100 rows)
Title
Citations
PageRank
Year
Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs
0
0.34
2020
Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress
0
0.34
2020
Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices
0
0.34
2020
First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS 2 Channel
0
0.34
2020
How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts
0
0.34
2020
Threshold Voltage Shift in a-Si:H Thin film Transistors under ESD stress Conditions
0
0.34
2020
Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight
0
0.34
2020
Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability
0
0.34
2019
UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities
0
0.34
2019
First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects
0
0.34
2019
Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior
0
0.34
2019
Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability
0
0.34
2018
On the ESD behavior of a-Si:H based thin film transistors: Physical insights, design and technological implications
0
0.34
2018
Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs
0
0.34
2018
Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs
0
0.34
2018
On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs
0
0.34
2018
Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?
0
0.34
2017
ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis
0
0.34
2017
A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET
0
0.34
2017
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package
0
0.34
2016
Two-stream indexing for spoken web search
2
0.46
2011
1