Name
Affiliation
Papers
MAYANK SHRIVASTAVA
Indian Institute of Technology, Kharagpur, India
21
Collaborators
Citations 
PageRank 
60
2
7.22
Referers 
Referees 
References 
4
121
35
Search Limit
100121
Title
Citations
PageRank
Year
Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs00.342020
Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress00.342020
Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices00.342020
First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS 2 Channel00.342020
How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts00.342020
Threshold Voltage Shift in a-Si:H Thin film Transistors under ESD stress Conditions00.342020
Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight00.342020
Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability00.342019
UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities00.342019
First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects00.342019
Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior00.342019
Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability00.342018
On the ESD behavior of a-Si:H based thin film transistors: Physical insights, design and technological implications00.342018
Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs00.342018
Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs00.342018
On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs00.342018
Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?00.342017
ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis00.342017
A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET00.342017
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package00.342016
Two-stream indexing for spoken web search20.462011