Paper Info
Title
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI
Abstract
Effect of mobility variation (Δμeff) during NBTI stress is well documented for larger area devices. In this paper, the effect of Δμeff on the statistics of NBTI degradation for small area devices is explored. Statistically relevant number of high-κ last Replacement Metal Gate p-FinFETs are characterized for NBTI stress to cover a range of three standard deviations for threshold voltage degradation (ΔVT). It is shown that Δμeff can results into erroneous mean (μ) and sigma (σ) VT shifts governing stochastic NBTI. The amount of error induced is found to depend on sense voltage (|VMEAS|). Further, correlation of ΔVT to VT0 is analyzed with VT0 estimated employing two different methods.
Year
DOI
Venue
2015
10.1109/IRPS.2015.7112705
IRPS
Keywords
Field
DocType
Negative Bias Temperature Instability (NBTI), p-MOSFETs, mobility variation (Delta mu(eff)), SPICE, FinFETs, Replacement Metal Gate (RMG)
Logic gate,Stress measurement,Voltage,Electronic engineering,Negative-bias temperature instability,Sigma,Engineering,Metal gate,Threshold voltage,Standard deviation
Conference
ISSN
Citations 
PageRank 
1541-7026
1
0.40
References 
Authors
1
6
Name
Order
Citations
PageRank
A. Chaudhary110.40
B. Kaczer29221.75
Philippe Roussel3358.04
Thomas Chiarella411.07
N. Horiguchi579.67
Mahapatra, S.6224.83