Paper Info
Title
Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation
Abstract
This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an NMOS transistor in triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. This evaluation compares the triple-well structure to a classical Psubstrate-only structure of an NMOS transistor. It reveals the possible activation change of the bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.
Year
DOI
Venue
2015
10.1109/IRPS.2015.7112799
IRPS
Keywords
Field
DocType
NMOS transistor, triple-well, body biasing, pulsed PLS, parasitic bipolar transistor
Photoelectric effect,Semiconductor laser theory,NMOS logic,Laser,Electronic engineering,Bipolar junction transistor,Engineering,Electronic circuit,Optoelectronics,Integrated circuit,Biasing
Conference
ISSN
Citations 
PageRank 
1541-7026
3
0.51
References 
Authors
0
7
Name
Order
Citations
PageRank
Nicolas Borrel1213.31
Clement Champeix2212.97
Mathieu Lisart3396.01
Alexandre Sarafianos4686.96
Edith Kussener5319.16
W. Rahajandraibe61410.25
Jean-Max Dutertre731329.14