Name
Title | ||
|---|---|---|
Thickness dependence on electrical and reliability properties for dense and porous low dielectric constant materials |
Abstract | ||
|---|---|---|
Thickness-dependent dielectric electrical and reliability characteristics of dense and porous low-k films were investigated in this study. Experimental results obtained using metal-insulator-silicon (MIS) structures reveal that the dielectric strength and dielectric breakdown time of low-k dielectric films are inversely proportional to the physical thickness of the dielectric film. An inverse power law combined with a critical thickness for dielectric breakdown characteristics is proposed and closely fitted to the experimental results. Additionally, the dense low-k films exhibited a higher critical thickness and a higher power law constant value, revealing that their breakdown behaviors are more strongly related to film thickness than those of porous low-k films. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112778 | IRPS |
Keywords | Field | DocType |
Low-k dielectric, Porogen, Leakage current, Reliability, Breakdown, TDDB | Critical thickness,Dielectric strength,Porosity,Dielectric,Inverse power law,Gate dielectric,Electronic engineering,High-κ dielectric,Engineering | Conference |
ISSN | Citations | PageRank |
1541-7026 | 1 | 0.38 |
References | Authors | |
2 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kai-Chieh Kao | 1 | 1 | 0.38 |
| Chi-Jia Huang | 2 | 1 | 0.38 |
| Chang-Sian Wu | 3 | 1 | 0.38 |
| Yi-Lung Cheng | 4 | 1 | 0.72 |