Title
Simple And Accurate Single Event Charge Collection Macro Modeling For Circuit Simulation
Abstract
A simple macro-model to accurately simulate upset error on CMOS devices is presented. This macro-model can accurately simulate the typical behavior of single event effect (SEE) caused by ionizing radiation charge collection at N type and P type diffusions. The model is calibrated using 3-D mixed mode technology computer aided design (TCAD) device simulations and implemented as a SPICE circuit macro-model. The model uses a dependent current source with a Weibull distribution to model the current injection on circuit node. The model shows physical response and adjusting parameters allows high accuracy to the 3-D TCAD simulated response.
Year
Venue
Keywords
2015
2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
SPICE, Ionizing particle, Single Event Effects, TCAD, 3D simulation
Field
DocType
ISSN
Spice,Computer science,Dependent source,Weibull distribution,CMOS,Electronic engineering,Upset,Solid modeling,Macro,Technology CAD
Conference
0271-4302
Citations 
PageRank 
References 
1
0.63
0
Authors
2
Name
Order
Citations
PageRank
Aymeric Privat110.63
Lawrence T. Clark215533.27