Title
A hybrid built-in self-test scheme for DRAMs
Abstract
This paper proposes a hybrid BIST scheme for DRAMs. The hybrid BIST consists of a microcode-based controller to support the programmability of test algorithms and an FSM-based controller to support the in-field programmability of configuration parameters of the DRAMs. Thus, if the needed test algorithms are out of the test algorithms stored in the microcodes, only metal changing is needed to change the supported test algorithms. Simulation results show that the hybrid BIST only needs about 9553 gates to support march and non-march test algorithms for JEDEC WideIO DRAMs.
Year
DOI
Venue
2015
10.1109/VLSI-DAT.2015.7114502
VLSI-DAT
Field
DocType
Citations 
Dram,Microcode,Read-only memory,Control theory,Algorithm design,Test algorithm,Computer science,Real-time computing,Electronic engineering,Built-in self-test,Embedded system
Conference
3
PageRank 
References 
Authors
0.40
7
9
Name
Order
Citations
PageRank
Chi-Chun Yang130.40
Jin-Fu Li266259.17
Yun-Chao Yu330.40
Kuan-Te Wu441.11
chihyen lo5578.68
Chao-Hsun Chen630.73
Jenn-Shiang Lai761.27
Ding-Ming Kwai852146.85
Yung-Fa Chou924423.76