Paper Info
Title
The progresses of MRAM as a memory to save energy consumption and its potential for further reduction
Abstract
Critical switching current, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sw</sub> , of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</sub> , becomes the order of 100-150fC. With the small Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</sub> , MRAM starts to save energy consumption by 70-80% compared with a conventional memory system. Analysis of the write pulse-width dependence of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</sub> revealed a further potential of perpendicular MTJ to reduce I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</sub> and Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</sub> . STT-MRAM is thought to achieve a further reduction of energy consumption.
Year
DOI
Venue
2015
10.1109/VLSIT.2015.7223638
2015 Symposium on VLSI Technology (VLSI Technology)
Keywords
Field
DocType
critical switching current,STT-MRAM,spin transfer torque-MRAM,perpendicular MTJ,write charge,energy consumption,write pulse-width dependence
Perpendicular,Computer science,Parallel computing,Electronic engineering,Magnetoresistive random-access memory,Memory management,Non-volatile memory,Conventional memory,Spin-transfer torque,Energy consumption
Conference
ISSN
Citations 
PageRank 
0743-1562
2
0.66
References 
Authors
0
5
Name
Order
Citations
PageRank
Hiroaki Yoda185.40
E. Kitagawa220.66
Naoharu Shimomura3476.49
S. Fujita420.66
Minoru Amano520.66