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NAOHARU SHIMOMURA
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Name
Affiliation
Papers
NAOHARU SHIMOMURA
Toshiba Corporation, Japan
8
Collaborators
Citations
PageRank
45
47
6.49
Referers
Referees
References
191
42
6
Search Limit
100
191
Publications (8 rows)
Collaborators (45 rows)
Referers (100 rows)
Referees (42 rows)
Title
Citations
PageRank
Year
High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows
0
0.34
2018
High-speed voltage-control spintronics memory focused on reduction in write current
0
0.34
2017
High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
0
0.34
2016
7.2 4Mb STT-MRAM-based cache with memory-access-aware power optimization and write-verify-write / read-modify-write scheme
6
0.46
2016
7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture
16
1.10
2015
The progresses of MRAM as a memory to save energy consumption and its potential for further reduction
2
0.66
2015
Highly reliable and low-power nonvolatile cache memory with advanced perpendicular STT-MRAM for high-performance CPU
20
2.85
2014
MRAM Write Error Categorization with QCKB
3
0.41
2006
1